СОВРЕМЕННАЯ ЭЛЕКТРОНИКА №7/2015

ПРОЕКТИРОВАНИЕ И МОДЕЛИРОВАНИЕ 76 WWW.SOEL.RU СОВРЕМЕННАЯ ЭЛЕКТРОНИКА ◆ № 7 2015 lated Signals. IEEE Microwave Measure- ments Conference (ARFTG). 2010. 75th ARFTG. P. 1–6. 3. Rudolph M., Fager C., Root D.E. Nonlinear Transistor Model Parameter Extraction Tech- niques. (The Cambridge RF and Microwave Engineering Series). Cambridge. U.K. Cam- bridge Univ. Press. 2012. 4. Aaen P., Pla J.A., Wood J. Modeling and Charac- terization of RF and Microwave Power FETs. (The Cambridge RF and Microwave Engineer- ing Series). Cambridge. U.K. Cambridge Univ. Press. 2007. 5. Dunleavy L., Baylis C., Curtice W., Connick R. Modeling GaN: Powerful but Challenging. IEEE Microwave Magazine. 2010. October. Vol. 11. Issue 6. P. 82–96. 6. Avolio G., Schreurs D., Raffo A., Crupi G., Ange- lov I., Vannini G., Nauwelaers B. Identification Technique of FETModel Based on Vector Non- linear Measurements. IET Journal. Electronics Letters. 2011. Vol. 47. Issue 24. P. 1323–1324. 7. Curtice W.R. Nonlinear Modeling of Compound Semiconductor HEMTs State of the Art. IEEE MTT-S International. 2010. P. 1194–1197. 8. Angelov I., Zirath H., Rorsman N. A New Empiri- cal Model for HEMT Devices. Microwave Sym- posiumDigest. 1992. Vol. 3. IEEE MTT-S Inter- national. P. 1583–1586. 9. Charbonniaud C., Xiong A., Dellier S., Jar- del O., Quere R. A Non Linear Power HEMT Model Operating in Multi-Bias Conditions. Microwave Integrated Circuits Conference (EuMIC). 2010. European. P. 134–137. 10. Berroth M., Bosch R. High-Frequency Equi- valent Circuit of GaAs FET’s for Large-Sig- nal Applications. Transactions on Micro- wave Theory and Techniques 39.2. 1991. P. 224–229. 11. Dambrine G., Cappy A., Heliodore F., Play- ez E. A NewMethod for Determining the FET Small-Signal Equivalent Circuit. Microwave Theory and Techniques, IEEE. 1988. Vol. 36. Issue 7. P. 1151–1159. 12. Teyssier J.P., Bouysse P., Ouarch Z., BarataudD., Peyretaillade T., Quere R. 40-GHz/150-ns Ver- satile PulsedMeasurement Sytem for Micro- wave Transistor Isothermal Characterization. Microwave Theory and Techniques, IEEE. 1998. Vol. 46. Issue 12. P. 2043–2052. 13. Lonac J.A., Santarelli A., Melczarsky I., Filic- ori F. A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance of HBTs. Gallium Arsenide and Other Semiconductor Application Sympo- sium. 2005. European. P. 197–200. 14. Forestier S., Gasseling T., Bouysse Ph., Quere R., Nebus J.M. A New Nonlinear Capacitance Model of Millimeter Wave Power PHEMT for Accurate AM/AM–AM/PM Simulations. Microwave andWireless Components Letters, IEEE. 2004. January. Vol. 14. N 1. P. 43–45. 15. Matsunaga N., Yamamoto M., Hatta Y., Masu- da H. An Improved GaAs Device Model for the Simulation of Analog Integrated Circuit. Electron Devices, IEEE. 2003. Vol. 50. Issue 5. P. 1194–1199. 16. Jardel O., De Groote F., Reveyrand T., Char- bonniaud C., Teyssier J.-P., Floriot D., Quere R. An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR. Microwave Theory Tech. 2007. Dec. Vol. 55. N 12. Pt. 2. P. 2660–2669. 17. Dudkiewicz S. Vector-Receiver Load Pull Measurements. Microwave Journal. 2011. Feb. P. 88–98. 18. Gasseling T., Barataud D., Mons S., Nebus J.M., Villotte J.P., Quere R. A New Character- ization Technique of Four Hot S parame- ters. IEEE MTT-S International. 2003. Vol. 3. P. 1663–1666. 19. De Groote F., Teyssier J.P., Gasseling T., Jar- del O., Verspecht J. Introduction to Measure- ments for Power Transistor Characteriza- tion. IEEE Microwave Magazine. 2008. June. Vol. 9. Issue 3. P. 70–85. © СТА-ПРЕСС